| 发明名称 |
SEMICONDUCTOR ELECTRODE FORMING METHOD |
| 摘要 |
PURPOSE:To form electrodes through lifting-off by laminating films of varying etching rates thereby forming spacers and preventing the delamination of resist. |
| 申请公布号 |
JPS52147063(A) |
申请公布日期 |
1977.12.07 |
| 申请号 |
JP19760063561 |
申请日期 |
1976.06.02 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
IKEDA TADASHI;ITOU SHINTAROU |
| 分类号 |
H01L21/306;H01L21/027;H01L21/28;H01L21/768;H01L23/485 |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
