| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
<p>PURPOSE:The write efficiency of reloadable ROMs is improved by extending the gate electrode positioned between source region and drain region slightly longer to the drain side and increasing the capacity between this and the drain region.</p> |
| 申请公布号 |
JPS52146569(A) |
申请公布日期 |
1977.12.06 |
| 申请号 |
JP19760063049 |
申请日期 |
1976.05.31 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
HORIUCHI SHIGEHARU;NOZAWA HIROSHI;MIMURA SHIYOUICHI |
| 分类号 |
G11C17/00;G11C16/04;H01L21/8247;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
G11C17/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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