| 摘要 |
A first junction transistor, the emitter-to-base potential (VBE) of which determines the negative-temperature-coefficient component of the standard voltage, is provided with direct-coupled collector-to-base feedback for adjusting its VBE to condition the transistor to conduct, as collector current, substantially all of an applied current that is temperature-independent or varies linearly with temperature. The positive-temperature-coefficient component of the standard voltage is developed as the difference between the offset potentials of a pair of semiconductor junctions, one of which may be the base-emitter junction of the first transistor. The negative- and positive-temperature-coefficient potentials are linearly combined to provide the standard voltage.
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