| 发明名称 |
SILICON CRYSTAL GROWTH METHOD |
| 摘要 |
PURPOSE:To eliminate the production of any defect based on small mounds by causing growth at the rate lower than a normal growth rate at the initial period of growth at the time of epitaxially growing a single crystal or polycrystal layer on a Si single crystal substrate. |
| 申请公布号 |
JPS52146556(A) |
申请公布日期 |
1977.12.06 |
| 申请号 |
JP19760063853 |
申请日期 |
1976.05.31 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
NISHIKAWA MICHIAKI;KAWABATA SADANORI |
| 分类号 |
C30B19/00;C30B29/06;H01L21/20;H01L21/205 |
主分类号 |
C30B19/00 |
| 代理机构 |
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代理人 |
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