| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
| 摘要 |
PURPOSE:To achieve the improvement in characteristics and the increase in fanout by isolating current source transistors and inverter elements and making a low resistance layer on the side walls of the isolating layer. |
| 申请公布号 |
JPS52146576(A) |
申请公布日期 |
1977.12.06 |
| 申请号 |
JP19760063721 |
申请日期 |
1976.05.31 |
| 申请人 |
FUJITSU LTD |
发明人 |
TAKAHASHI HITOSHI |
| 分类号 |
H01L21/8226;H01L21/331;H01L27/02;H01L27/082;H01L29/73 |
主分类号 |
H01L21/8226 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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