发明名称 |
Gate turn off semiconductor rectifiers |
摘要 |
In semiconductor controlled rectifiers which can be of otherwise conventional design and configuration, a layer of relatively high resistivity material is disposed between the base region to which the gate electrode is connected and the otherwise immediately adjacent emitter region.
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申请公布号 |
US4062032(A) |
申请公布日期 |
1977.12.06 |
申请号 |
US19750580771 |
申请日期 |
1975.05.27 |
申请人 |
RCA CORPORATION |
发明人 |
NEILSON, JOHN MANNING SAVIDGE |
分类号 |
H01L29/744;H01L29/00;H01L29/74;(IPC1-7):H01L29/90 |
主分类号 |
H01L29/744 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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