发明名称 Gate turn off semiconductor rectifiers
摘要 In semiconductor controlled rectifiers which can be of otherwise conventional design and configuration, a layer of relatively high resistivity material is disposed between the base region to which the gate electrode is connected and the otherwise immediately adjacent emitter region.
申请公布号 US4062032(A) 申请公布日期 1977.12.06
申请号 US19750580771 申请日期 1975.05.27
申请人 RCA CORPORATION 发明人 NEILSON, JOHN MANNING SAVIDGE
分类号 H01L29/744;H01L29/00;H01L29/74;(IPC1-7):H01L29/90 主分类号 H01L29/744
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