| 摘要 |
A nitride semiconductor light emitting diode and a manufacturing method thereof are provided to improve the luminous efficiency by suppressing the generation of defect within the active layer. A nitride semiconductor light emitting diode(200) comprises a substrate(201), an N-type contact layer(220), an InGaN relief layer(230), an active layer(240) and a p-type contact layer(260). The n-type contact layer is formed on the top of the substrate. The InGaN relief layer is formed on the n-type contact layer. The active layer is formed on the InGaN relief layer. The active layer successively independently can have the well layer and the barrier layer. The InGaN relief layer can improve the crystalline of the active layer by suppressing the strain relax or the V-pits generation between the well layer and the barrier layer.
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