| 发明名称 | Symmetric tunnel field effect transistor | ||
| 摘要 | The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region. | ||
| 申请公布号 | US9379253(B1) | 申请公布日期 | 2016.06.28 |
| 申请号 | US201514837785 | 申请日期 | 2015.08.27 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Bajaj Mohit;Gundapaneni Suresh;Konar Aniruddha;Mavilla Narasimha R.;Murali Kota V. R. M.;Nowak Edward J. |
| 分类号 | H01L29/786;H01L29/66;H01L29/267;H01L29/08;H01L29/78;H01L21/02 | 主分类号 | H01L29/786 |
| 代理机构 | Roberts Mlotkowski Safran & Cole, P.C. | 代理人 | Meyers Steven;Calderon Andrew M.;Roberts Mlotkowski Safran & Cole, P.C. |
| 主权项 | 1. A structure comprising a gate structure including a source region and a drain region both of which comprise a doped VO2 region, wherein the doped VO2 region is doped with a transition metal. | ||
| 地址 | Armonk NY US | ||