Bottom-up metal gate formation on replacement metal gate finFET devices

摘要

A method of fabricating a replacement metal gate in a transistor device, a fin field effect transistor (finFET), and method of fabricating a finFET device with the replacement metal gate are described. The method of fabricating the replacement metal gate includes forming a dummy gate structure over a substrate, the dummy gate structure being surrounded by an insulating layer, and removing the dummy gate structure so as to expose a trench within the insulating layer. The method also includes conformally depositing a dielectric material layer and a work function metal layer over a the insulating layer and in the trench and removing the dielectric material layer and the work function metal layer from a tip surface of the insulating layer, recessing the work function metal layer below a top of the trench, and selectively forming a gate metal only on exposed surfaces of the work function metal layer.

主权项

1. A method of fabricating a replacement metal gate in a transistor device, the method comprising:
forming a dummy gate structure over a substrate, the dummy gate structure surrounded by an insulating layer; removing the dummy gate structure so as to expose a trench within the insulating layer; conformally depositing a dielectric material layer and a work function metal layer over a the insulating layer and in the trench and removing the dielectric material layer and the work function metal layer from a top surface of the insulating layer; recessing the work function metal layer below a top of the trench; selectively growing a gate metal only on exposed surfaces of the work function metal layer; forming a dielectric cap over the gate metal to fill the trench; and removing the dielectric cap and performing a metal fill of the trench, wherein the removing the dielectric cap and the performing the metal fill is performed when the selectively growing the gate metal results in a gap within the inner wall of the trench.