| 摘要 |
An improved method and structure for producing narrow openings to the surface of a first material processing a first set of etch characteristics is disclosed. The method includes the step of forming on a portion of the surface of the first material an etchable mask having a first narrow-opening-forming lateral edge disposed along a selected edge of the to-be-formed narrow opening. A protective layer of a second material possessing a second set of etch characteristics is next formed on the exposed surface of the first material, the protective-layer having a second narrow-opening-forming lateral edge juxtaposed the first narrow-opening-forming lateral edge. The first narrow-opening-forming lateral edge on the mask is then etched to expose unprotected areas of the first material-thereby producing the narrow opening to the surface of the first material. The method and structure of the invention is particularly well suited for producing fine geometry patterns in solid state device structures. |
