| 摘要 |
The sputtering apparatus includes a concentric anode and cathode electrode and a magnetic structure for producing a magnetic field crossed with the electric field (magnetron type discharge) over the cathode region to be sputtered for enhancing the sputtering operation. The magnetic structure includes field shaping means, such as shunts or bucking magnets, to limit the cathode dark space substantially to the effective sputter surface of the cathode. A ground shield surrounding the cathode, but not extending into the dark space, is utilized to contribute to the effect produced by the magnetic field, and means are provided for cooling the anode and cathode. In the case of sputtering ferromagnetic material, a ferromagnetic sputter cathode has its thickness dimensioned so as to be magnetically saturated by the applied magnetic field in a region of relatively low sputter erosion and to be thicker in regions of more intense sputter erosion.
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