发明名称 |
VERTICAL THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a vertical thin film transistor easy in process and advantageous in mass production, and a vertical transistor manufactured by the manufacturing method.SOLUTION: A vertical thin film transistor 200 according to the present invention includes: a substrate 210; two gate electrodes 220 each of which includes a first margin metal layer 2611 formed on the substrate 210 and a second margin metal layer 2621 formed on the first margin metal layer 2611; a first electrode 230 and a second electrode 240 arranged between the two gate electrodes; and a channel layer 250 arranged between the first electrode 230 and the second electrode 240.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016111344(A) |
申请公布日期 |
2016.06.20 |
申请号 |
JP20150211464 |
申请日期 |
2015.10.28 |
申请人 |
HON HAI PRECISION INDUSTRY CO LTD |
发明人 |
LIN HSIN-HUA;KAO YI-CHUN;LEE CHIH-LUNG;SHIH PO-LI;FANG KUO-LUNG |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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