发明名称 VERTICAL THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a vertical thin film transistor easy in process and advantageous in mass production, and a vertical transistor manufactured by the manufacturing method.SOLUTION: A vertical thin film transistor 200 according to the present invention includes: a substrate 210; two gate electrodes 220 each of which includes a first margin metal layer 2611 formed on the substrate 210 and a second margin metal layer 2621 formed on the first margin metal layer 2611; a first electrode 230 and a second electrode 240 arranged between the two gate electrodes; and a channel layer 250 arranged between the first electrode 230 and the second electrode 240.SELECTED DRAWING: Figure 1
申请公布号 JP2016111344(A) 申请公布日期 2016.06.20
申请号 JP20150211464 申请日期 2015.10.28
申请人 HON HAI PRECISION INDUSTRY CO LTD 发明人 LIN HSIN-HUA;KAO YI-CHUN;LEE CHIH-LUNG;SHIH PO-LI;FANG KUO-LUNG
分类号 H01L29/786;H01L21/336 主分类号 H01L29/786
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