发明名称 |
Signal monitoring of through-wafer vias using a multi-layer inductor |
摘要 |
According to a method herein, a multi-level inductor is created around a through-silicon-via (TSV) in a semiconductor substrate. A voltage induced in the multi-level inductor by current flowing in the TSV is sensed, using a computerized device. The voltage is compared to a reference voltage, using the computerized device. An electrical signature of the TSV is determined based on the comparing the voltage to the reference voltage, using the computerized device. |
申请公布号 |
US9372208(B2) |
申请公布日期 |
2016.06.21 |
申请号 |
US201414146162 |
申请日期 |
2014.01.02 |
申请人 |
International Business Machines Corporation |
发明人 |
DiRocco Mark A.;Peterson Kirk D.;Robson Norman W.;Stevens Keith C. |
分类号 |
H01L49/02;H01L23/48;H01L21/66;H01L21/768;G01R31/26;G01R1/30;G01R17/00;G01R31/28;G01R19/00 |
主分类号 |
H01L49/02 |
代理机构 |
Gibb & Riley, LLC |
代理人 |
Gibb & Riley, LLC ;Meyers, Esq. Steven J. |
主权项 |
1. A method of identifying failed components in an integrated circuit, comprising:
creating a multi-level coil inductor around a through-silicon-via (TSV) in a multi-layer semiconductor substrate, said TSV electrically connecting layers of said multi-layer semiconductor substrate, and said multi-level coil inductor comprising a coil having several turns around said TSV; passing an electrical current through said TSV; sensing a voltage induced in said multi-level coil inductor by said electrical current flowing in said TSV, using a computerized device; comparing said voltage to a reference voltage, using said computerized device; and identifying failure of said TSV based on said voltage not matching said reference voltage, using said computerized device. |
地址 |
Armonk NY US |