发明名称 Signal monitoring of through-wafer vias using a multi-layer inductor
摘要 According to a method herein, a multi-level inductor is created around a through-silicon-via (TSV) in a semiconductor substrate. A voltage induced in the multi-level inductor by current flowing in the TSV is sensed, using a computerized device. The voltage is compared to a reference voltage, using the computerized device. An electrical signature of the TSV is determined based on the comparing the voltage to the reference voltage, using the computerized device.
申请公布号 US9372208(B2) 申请公布日期 2016.06.21
申请号 US201414146162 申请日期 2014.01.02
申请人 International Business Machines Corporation 发明人 DiRocco Mark A.;Peterson Kirk D.;Robson Norman W.;Stevens Keith C.
分类号 H01L49/02;H01L23/48;H01L21/66;H01L21/768;G01R31/26;G01R1/30;G01R17/00;G01R31/28;G01R19/00 主分类号 H01L49/02
代理机构 Gibb & Riley, LLC 代理人 Gibb & Riley, LLC ;Meyers, Esq. Steven J.
主权项 1. A method of identifying failed components in an integrated circuit, comprising: creating a multi-level coil inductor around a through-silicon-via (TSV) in a multi-layer semiconductor substrate, said TSV electrically connecting layers of said multi-layer semiconductor substrate, and said multi-level coil inductor comprising a coil having several turns around said TSV; passing an electrical current through said TSV; sensing a voltage induced in said multi-level coil inductor by said electrical current flowing in said TSV, using a computerized device; comparing said voltage to a reference voltage, using said computerized device; and identifying failure of said TSV based on said voltage not matching said reference voltage, using said computerized device.
地址 Armonk NY US