发明名称 METAL OXIDE COMPLEX STRUCTURE USING META-THERMAL IMPRINTING AND PHOTOLITHOGRAPHY AND METAL OXIDE COMPLEX STRUCTURE THEREBY
摘要 The present invention relates to a metal oxide composite structure and a method of preparing the same, and more specifically, to a method of preparing a metal oxide composite structure via meta-heat curing imprinting and photolithography processes and a metal oxide composite structure prepared thereby. According to the present invention, the method comprises: a step in which a photosensitive metal-organic material precursor layer is formed on top of a wafer or a film; a meta-heat curing imprinting step in which heat curing is performed at a temperature below the temperature which would completely cure the photosensitive metal-organic material precursor layer and above the temperature which would critically cure the same, and an imprinting stamp having a first pattern is used to apply pressure to the photosensitive metal-organic material precursor layer; a step in which the imprinting stamp is removed from the photosensitive metal-organic material precursor layer; a complete curing photolithography step in which a photomask having a second pattern is placed on the above patterned photosensitive metal-organic material precursor layer and then subjected to UV radiation or heat at a dose high enough to induce a complete curing, to produce a metal oxide thin film pattern layer; a step in which the above cured metal oxide thin film pattern layer is developed to produce a metal oxide composite structure having the first and second patterns. According to the present invention, metal oxide structures having two different patterns can be easily prepared, and the process and cost can be simplified and reduced by performing the imprinting process at a temperature that does not induce a complete curing, and subsequently performing the complete curing through the photolithography process, and by performing an intermediate curing process excluding an etching process to reduce the number of etching processes.
申请公布号 KR20160084965(A) 申请公布日期 2016.07.15
申请号 KR20150001430 申请日期 2015.01.06
申请人 KOREA ADVANCED NANO FAB CENTER 发明人 PARK, HYEONG HO;KIM, SEO YEON;HER, EUN JIN;SHIN, HYUN BEOM;SUNG, HO KUN;KANG, HO KWAN;PARK, KYUNG HO;PARK, WON KYU
分类号 G03F7/00;G03F7/004 主分类号 G03F7/00
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