发明名称 PROCESS FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT HAVING A METAL CONTACT LAYER BETWEEN TWO INSULATING LAYERS
摘要 <p>Semiconductor structures and a method of producing the same comprising coating the surface of a semiconductor body with a first inorganic insulating layer; coating an electrical conductor path on the first insulating layer; coating an organic layer which includes a compatible compound therein which vaporizes at a relatively low temperature onto select points or portions of the conductor path; coating a second inorganic insulating layer on all exposed surfaces of the conductor path, the organic layer and the first insulating layer; and heating the resulting structure to a temperature sufficient to vaporize the compatible compound within the organic layer and remove areas of the second insulating layer which superimposed the organic layer so as to unmask the select portions of the conductor path for access to external electrical connection means.</p>
申请公布号 CA1021469(A) 申请公布日期 1977.11.22
申请号 CA19740211481 申请日期 1974.10.16
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 PAMMER, ERICH
分类号 H01L21/768;H01L21/00;H01L23/29;H01L23/485;H01L23/522 主分类号 H01L21/768
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