| 发明名称 |
WERKWIJZE VOOR HET VERVAARDIGEN VAN EEN HALFGE- LEIDERINRICHTING EN HALFGELEIDERINRICHTING VER- VAARDIGD MET BEHULP VAN DE WERKWIJZE. |
| 摘要 |
The invention relates to a method of manufacturing a semiconductor device in which a compound consisting of at least two semiconductor materials and having an energy gap which is smaller than that of a substrate is deposited epitaxially on the substrate. According to the invention, the composition of the mixture is determined during the deposition by means of measurement of the thermal emission. |
| 申请公布号 |
NL7605234(A) |
申请公布日期 |
1977.11.21 |
| 申请号 |
NL19760005234 |
申请日期 |
1976.05.17 |
| 申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN TE EINDHOVEN. |
发明人 |
|
| 分类号 |
H01L33/00;H01L21/205;(IPC1-7):01L21/20 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
