| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
| 摘要 |
PURPOSE:To obtain an I<2>L of low power consumption at a high speed without lowering the current amplification factor of an NPN transistor by forming a P type buried region to such a shape in which it is lacked directly under N type diffused regions. |
| 申请公布号 |
JPS52138882(A) |
申请公布日期 |
1977.11.19 |
| 申请号 |
JP19760055563 |
申请日期 |
1976.05.14 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
TOMIZAWA OSAMU;KATOU SHIYUUICHI;NAKANO TAKAO |
| 分类号 |
H01L27/082;H01L21/331;H01L21/8226;H01L27/02;H01L29/73 |
主分类号 |
H01L27/082 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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