发明名称 |
VERFAHREN ZUM HERSTELLEN VON KOPLANAREN SCHICHTEN AUS DUENNEN FILMEN |
摘要 |
A method for forming coplanar thin films, particularly conductor-insulator patterns, on a substrate. A pattern which includes a first thin film and an expendable material deposited thereon is formed on the substrate. The expendable material is selected so that it can be selectively removed by an etchant which does not attack the first thin film or an insulator which is to be deposited. The second thin film is deposited by RF sputtering at a bias which is sufficiently high to cause substantial reemission of the second film. This results in the covering of the exposed substrate surfaces and the upper surface of the material with the second film but leaving the side surfaces of the material exposed. The expendable material is then chemically etched so as to lift-off both the material and the second film deposited thereon, thereby leaving a coplanar pattern of first and second thin films. |
申请公布号 |
DE2709986(A1) |
申请公布日期 |
1977.11.17 |
申请号 |
DE19772709986 |
申请日期 |
1977.03.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
HAVAS,JANOS;S. LECHATON,JOHN;SKINNER LOGAN,JOSEPH |
分类号 |
H05K3/46;H01L21/027;H01L21/28;H01L21/306;H01L21/312;H01L21/3205;H01L21/768;H01L21/84;H01L23/522;H05K3/14;(IPC1-7):H01L49/02;H01L21/314 |
主分类号 |
H05K3/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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