| 摘要 |
1492015 Integrated circuit devices KAYTHEON CO 28 May 1976 [4 June 1975] 22331/76 Heading H1K In an I.C. device an interconnection substrate 102 of semi-conductor material is provided with a first set of interconnection leads 112 connected to a second set of external connecting leads 112, the interconnection leads being in the form of a cantilever over an aperture 106 having an I.C. chip therein, and the interconnection leads 112 are connected to corresponding terminal pads 108 of the I.C. chip. Prior to the encapsulation of the I.C. chip 110 and ultrasonic bonding of the interconnection leads to the terminal pads, the I.C. chip is subjected to dynamic testing by applying suitable voltages through the interconnection leads, and electrical contact between the latter and the chip is provided by pressing pointed ends 212, Fig. 3, of the interconnection leads against the terminal pads, the I.C. chip being held firmly against a glass mounting plate due to vacuum present on one side of the plate. Dents (214), Fig. 4 (not shown) present in the interconnection leads of aluminium facilitate alignment of an ultrasonic welded tip during bonding. In order to obtain interconnection leads having the pointed ends 212, a silicon substrate (202) of (111) orientation is chemically etched using a mask to produce pits in the shape of a polyhedron having a pointed bottom, aluminium is sputter deposited on the masked surface and in the pits and after forming the interconnection leads, an aperture to accommodate the I.C. chip is etched through the opposite surface of the substrate. The interconnection leads 104 may be provided at different levels mutually insulated and may not extend beyond the outer edge of the interconnection substrate in which case conductive bridges (522), Fig. 5 (not shown), are welded between the external leads and the interconnection leads. Metallization levels 120 of gold are provided to connect the external leads to the interconnection leads. |
