| 发明名称 |
Ion implantation method for the fabrication of gallium arsenide semiconductor devices utilizing an aluminum nitride protective capping layer |
| 摘要 |
A method for forming tellurium N-type layers in gallium arsenide by using ion implantation as the doping process and aluminum nitride as a protective overcoat to prevent disassociation of the gallium arsenide during anneal.
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| 申请公布号 |
US4058413(A) |
申请公布日期 |
1977.11.15 |
| 申请号 |
US19760685841 |
申请日期 |
1976.05.13 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
WELCH, BRYANT M.;PASHLEY, RICHARD D. |
| 分类号 |
H01L21/265;H01L21/318;H01L21/324;H01L23/31;(IPC1-7):H01L21/26;H01L21/32 |
主分类号 |
H01L21/265 |
| 代理机构 |
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代理人 |
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