发明名称 |
CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a charged particle beam lithography apparatus which can preventing degradation of drawing accuracy caused by pressure change.SOLUTION: An electron optical lens barrel 301 includes a flange provided around a protrusion and forming a seal portion between the flange and a chamber 300a. The chamber 300a is composed of low thermal expansion material, and the seal portion is composed of low thermal expansion material having concentration of phosphorus and sulfur lower than that of other portions.SELECTED DRAWING: Figure 3 |
申请公布号 |
JP2016157968(A) |
申请公布日期 |
2016.09.01 |
申请号 |
JP20160082649 |
申请日期 |
2016.04.18 |
申请人 |
NUFLARE TECHNOLOGY INC |
发明人 |
YASUDA SATOSHI;KAWASHIMA TATSUHIRO |
分类号 |
H01L21/027;G03F7/20;H01J37/16;H01J37/305 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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