METHOD FOR THE THERMAL OXIDATION OF SILICON WITH ADDED CHLORINE

摘要

1447184 Thermally oxidizing silicon INTERNATIONAL BUSINESS MACHINES CORP 9 Jan 1974 [24 March 1973] 00995/74 Heading C1A A method for thermal oxidation of a silicon element is described, in which a stream of oxygen containing carbon tetrachloride vapour is passed over the silicon to form an oxidized surface layer. In examples, silicon wafers are thus treated for a period of 23 minutes after which they are tempered for 15 minutes at 1050‹ C. in a nitrogen atmosphere. Differing degrees of oxidation are obtained by varying the concentration of carbon tetrachloride in the oxygen stream from zero to 3À75 mol. per cent.