| 摘要 |
<p>1493824 Semiconductor devices GENERAL ELECTRIC CO 28 Oct 1974 [30 Oct 1973] 46446/74 Heading H1K [Also in Division B1] A metal layer 22 is located entirely within a semiconductor body 10 by a thermomigration process whereby a mass of a melt comprising the metal and the semiconductor material migrates into the body 10 from a (preferably recessed) surface 12 thereof along the direction of an increasing temperature gradient, leaving behind it a "trail" 24 of recrystallized semiconductor material doped with the metal. The recrystallized region 24 may be of the same or opposite conductivity type to the body 10, and may also allegedly be intrinsic. Semiconductor materials referred to are Si, Ge, SiC, GaAs and other III-V compounds, and II-VI compounds, and suitable metals are Al, Ga, In, Sn/Sb alloy, Sn, Pb, Au or Pt. After cooling to solidify the metal layer 22 a further annealing step is preferably performed to relieve strain around the layer 22. For a (111) oriented body 10 the layer 22 migrates as a triangular (111) platelet with boundaries in (112) planes. For a (100) oriented body 10 the migrating droplet takes a pyramidal form with four leading (111) faces and a trailing (100) face. Other possible orientations are described, including some in which the originally deposited metal is a wire oriented along a particular crystal axis.</p> |
