发明名称 |
Method of producing a tantalum thin film capacitor |
摘要 |
A method of producing thin film tantalum capacitors having a tantalum thin film electrode mounted on a nonconducting support member is described. The tantalum electrode is doped with nitrogen to produce a nitrogen content in a range from the nitrogen content of beta tantalum to that for tantalum nitride. A tantalum pentoxide film with dielectric properties is grown on the tantlum electrode by oxidation. At least, the tantalum electrode and the dielectric are subjected to tempering. The dielectric is then covered with another electrode.
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申请公布号 |
US4058445(A) |
申请公布日期 |
1977.11.15 |
申请号 |
US19760670827 |
申请日期 |
1976.03.26 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
ANDERS, WILFRIED |
分类号 |
H01G4/005;H01G4/06;H01G4/10;H01L21/70;(IPC1-7):C23C15/00 |
主分类号 |
H01G4/005 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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