PROCESS FOR FORMING EPITAXIAL LAYER OF SINGLE CRYSTAL SILICON

摘要

1515837 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 19 April 1977 [11 May 1976] 16291/77 Heading H1K An epitaxial Si layer is provided on a monocrystalline Si substrate 10 by depositing a polycrystalline Si layer 11 on the substrate 10 at a temperature below 1000‹ C., ion-bombarding the device to render the Si layer 11 amorphous up to the interface between the two layers, and annealing, to convert the amorphous Si into a monocrystalline epitaxial layer.