| 摘要 |
A method for minimizing seam effect on a TEOS oxide film deposited during a trench filling process performed on a semiconductor substrate within a semiconductor substrate plasma processing device comprises a step of supporting the semiconductor substrate on a pedestal within a vacuum chamber of the semiconductor substrate plasma processing device. Process gas including TEOS, an oxidizer and argon flows in a processing region of the vacuum chamber through a facing plate of a shower head assembly. RF energy energizes the process gas through plasma, and a TEOS oxide film is deposited on the semiconductor substrate to fill at least one trench of the substrate. The argon is supplied in sufficient quantity to increase the electron density of plasma so as to increase a deposition rate of the TEOS oxide film facing the center of the semiconductor substrate and so as to reduce a seam effect of the TEOS oxide film deposited within at least one trench. |
