发明名称 |
VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERANORDNUNG UND DURCH DIESES VERFAHREN HERGESTELLTE ANORDNUNG |
摘要 |
<p>A method of manufacturing a semiconductor device having a transistor structure in which the emitter zone comprises a lower-doped region adjoining the base zone and a more highly-doped region adjoining the surface. According to the invention, the more highly-doped part is obtained by the introduction of doping atoms through an undoped polycrystalline layer provided on the surface. Preferably, a thin silicon nitride or silicon oxide layer is provided between the surface and the polycrystalline silicon layer prior to providing the latter.</p> |
申请公布号 |
DE2718449(A1) |
申请公布日期 |
1977.11.10 |
申请号 |
DE19772718449 |
申请日期 |
1977.04.26 |
申请人 |
N.V.PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
DE GRAAFF,HENDRIK CORNELIS;HERMAN HART,PAUL ANTON;SCHMITZ,ALBERT;WILLEM SLOTBOOM,JAN |
分类号 |
H01L29/04;H01L21/00;H01L21/225;H01L21/331;H01L29/08;H01L29/73;(IPC1-7):H01L29/70 |
主分类号 |
H01L29/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|