PIN semiconductor hyperfrequency diode - has external resistance film which shunts first and second opposite conductivity type regions

摘要

The p.i.n. hyperfrequency diode has semiconductor body (11) having two principle opposite faces (12, 15). It has a first superficial region (13) of high impurity concentration of a first type of conductivity. This region extends from a first of the principal faces. The diode has an intermediate region (14) of weak impurity concentration of the first conductivity. The diode has a second superficial high impurity concentration region (16) of second type conductivity opposite to the first. This second region (16) extends from the second face and is localised at a distance from the periphery of the face. It is also connected to an exterior circuit. A high impurity concentration lateral (22) zone of the type conductivity, is situated rear to the periphery of the semiconductor body. This zone (22) extends between the frist superficial region and the second face. A high resistance conducting film (23) extends onto the second face (15).