发明名称 Semiconductor device with composite metal heat-radiating plate onto which semiconductor element is soldered
摘要 A semiconductor device has a composite metal heat-radiating plate consisting of, for example, two copper layers for serving as a thermally and electrically conducting medium and an iron layer for giving mechanical strength, interposed between the copper layers, in which the semiconductor element is directly or indirectly, electrically and mechanically coupled by soldering to one of the copper layers.
申请公布号 US4057825(A) 申请公布日期 1977.11.08
申请号 US19760701809 申请日期 1976.07.01
申请人 HITACHI, LTD. 发明人 NARITA, KAZUTOYO;SAKAUE, TADASHI;NIINO, YUZI
分类号 H01L23/049;H01L23/373;H01L23/433;H01L25/11;(IPC1-7):H01L23/02;H01L23/28 主分类号 H01L23/049
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