| 摘要 |
<p>1530841 Electrode materials and processing; processing semiconductors PHILIPS GLOEILAMPENFABRIEKEN NV 26 April 1977 [29 April 1976] 17317/77 Headings H1D and H1K A field emission device comprises a conical electrode 2 on a substrate 1, e.g. both of monocrystalline Si, covered, except for the tip of the electrode by a dielectric layer 3, e.g. of SiO 2 , which in turn is covered with a conductive layer 4, e.g. of polycrystalline Si, that extends in the direction of the tip beyond the dielectric layer to form a cap-shaped accelerating electrode laterally surrounding the electrode 2. Emission from the tip may be enhanced by covering it with a layer of carbon or zirconium oxide, and the device, together with a further conductive layer serving as a focussing electrode provided on a further dielectric layer if desired, may be used in a camera tube, display tube or grid microscope. In such use the substrate may have many conical electrodes 5 microns in height and spaced by 15 microns which may be operated individually or in groups. In fabricating the device the conical electrode is formed by preferential etching of a (100) face of a Si monocrystal, providing layers 3, 4, with the aperture being formed in the conductive layer 4 using a a photolacquer technique and subsequently etching away selected parts of the dielectric layer 3, Figs. 2, 3 (not shown). An alternative method, Figs. 4-7 (not shown), utilizes an island mask to form the electrodes and then by selective masking and etching to form the device.</p> |
