| 摘要 |
<p>Prepn. of film-forming solns. for doping semiconductor materials comprises mixing dioxan with H2O, adding H3PO4 as dopant, and then adding a tetraalkoxysilane (I) in an amt. of 1 mole per 3-5 moles of H2O in the mixt. The solns. can be used in the mfr. of transistors and IC components. Formation of 3-dimensional polysiloxane chains is inhibited; this improves the storage stability of the solns. (esp. at high H3PO4 concns.) and improves the reproducibility of the elctrophysical properties of the resulting diffusion structures. The solns. form films with uniform thickness and dopant distribution, which are free of cracks and pores. The mixt. is pref. kept at =3 degrees C while adding (I). The H2O concn. is pref. 1.5-7.5 mole/l. The H3PO4/(I) molar ratio is pref. 0.36-1.28 (esp. 0.57-0.86). After adding (I), the soln. is pref. treated with 0.005-0 4 mole/l of HCl to further increase the stability of the soln.</p> |
