发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent the load of junction time from affecting the protection film and thus to avoid cracks, by forming the junction pad directly onto the heat oxidation film not onto the protection film which contains the area formed on the wiring layer.</p>
申请公布号 JPS52131455(A) 申请公布日期 1977.11.04
申请号 JP19760047658 申请日期 1976.04.28
申请人 HITACHI LTD 发明人 KATOU HIROSHI
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L23/48 主分类号 H01L23/52
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