Verfahren zur Anbringung eines ohmschen Kontaktes auf einem halbleitenden Koerper aus einem p-leitenden Tellurid eines zweiwertigen Metalls

摘要

789,338. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES, Ltd. Nov. 28, 1955 [Dec. 1, 1954], No. 34019/55. Class 37. An ohmic contact is applied to a P-type semiconductor body consisting of a telluride of a bivalent metal such as Zn, Cd, Hg, Sn and Pb, by applying tellurium locally to the body, and then melting the Te in a non-oxidizing atmosphere. The Te may be applied in the form of a powder or paste, or as a solid piece, or by evaporation. A layer of gold may be added to the Te. In the example described, a piece of Te is applied to a plate of Cd Te and melted at 500‹ C. for two minutes in an atmosphere of nitrogen with 10 per cent of hydrogen. The semi-conductor body may also comprise monovalent cations such as Cu, Ag or Au and the alkali metals.