| 摘要 |
1490665 Epitaxial growth R C A CORPORATION 15 May 1975 [28 May 1974] 20617/75 Heading BIS A method of growing an epitaxial layer of silicon on a surface of a substrate comprises heating the substrate in a furnace, and introducing a mixture of dichlorosilane and hydrogen gas into the furnace in a concentration to react the dichlorosilane with the hydrogen gas to grow an epitaxial layer of silicon on the substrate at a rate of at least 5 Ám/min. Good quality planar deposits of thicknesses in excess of 25Ám can be grown in this way.
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