OPTICAL RADIATION DETECTOR AND METHOD OF MAKING THE SAME

摘要

1490799 Semiconductor radiation detectors RCA CORPORATION 19 Feb 1975 7040/75 Heading H1K A radiation detector, e.g. a solar cell, includes single crystalline P and N regions 18, 16 each of a thickness substantially equal to the minority carrier diffusion length. As shown, the regions are epitaxially grown on a Si substrate 12 of N+ type. The dopant concentration for P layer 18 is increased towards the end of the deposition to provide a P+ layer 22 for contact by a metal film electrode 24. Another metal film electrode 26 is applied to the substrate 12 as a contact to the N layer 16. The thickness of the layers 16, 18 ensures that all the excess carriers generated by radiation are trapped by the PN junction 20. The NN+ interface 14 reflects back some of the incident radiation.