| 摘要 |
<p>PURPOSE:To simplify the structure and decrease the frequency of photoprocessing and to reduce a leak current by growing amorphous silicon film on a metallic film having impurities in its surface and forming an intrinsic layer as the insulating substrate side of its extension part. CONSTITUTION:An (i) type layer 4i which is the high-resistance intrinsic layer in the amorphous silicon film 4 is formed on an insulating substrate 1 between a metallic film 30 on a picture element electrode 10 as one terminal of a thin film diode 30 and a connecting film 7 as the other terminal. Namely, while an impurity-doped layer of one conduction type is formed in the amorphous silicon film 4 on the metallic film 3 to form a diode main body, an intrinsic layer 4i having high resistance on the side of the insulating substrate 1 is arranged at the extension part of the amorphous silicon film 4. Consequently, the structure is simple, the frequency of photoprocessing required for the manufacture is small, and while the leak current is reduced, the necessary area may be small.</p> |
