发明名称 |
Fabrication of power field effect transistors and the resulting structures |
摘要 |
The fabrication method provides a power metal-oxide-semiconductor field-effect transistor (MOSFET) having high switching speed capabilities. The high switching speed is facilitated by narrow channel length which is defined by the difference in lateral diffusion junctions of the P substrate and N source diffusions. The high current capability is produced by the large channel width. The high voltage capability is caused by the use of FET substrate P diffusions designed to be located apart from one another by very small distances. Unbiased or floating P diffusions are designed to flank the outer peripheries of P substrate diffusions. The close proximity of the adjacent P substrate diffusions reduces the electric field in the curvature portion of the P diffusion junctions in the N- silicon body at their inner peripheries, while the presence of the unbiased P diffusions at the appropriate distance from the outer peripheries of P substrate diffusions reduces the electric field in the curvature region of the P substrate diffusions at their outer peripheries. The N silicon body forms the drain region.
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申请公布号 |
US4055884(A) |
申请公布日期 |
1977.11.01 |
申请号 |
US19760750053 |
申请日期 |
1976.12.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JAMBOTKAR, CHAKRAPANI GAJANAN |
分类号 |
H01L21/336;H01L29/06;H01L29/78;(IPC1-7):B01J17/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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