发明名称 |
Integrated injection logic memory circuit |
摘要 |
A new integrated circuit in which bias currents are supplied by means of a current injector, a multi-layer structure in which current is supplied, by means of injection and collection of charge carriers via rectifying junctions, to zones to be biased of circuit elements of the circuit, preferably in the form of charge carriers which are collected by the zones to be biased themselves from one of the layers of the current injector. By means of said current injector circuit arrangements can be realized without load resistors being necessary, while the wiring pattern may be very simple and the packing density of the circuit elements may be very high. In addition a simple method of manufacturing with comparatively few operations can in many cases be used in particular upon application of transistors having a structure which is inverted relative to the conventional structure.
|
申请公布号 |
US4056810(A) |
申请公布日期 |
1977.11.01 |
申请号 |
US19760653131 |
申请日期 |
1976.01.28 |
申请人 |
U.S. PHILLIPS CORPORATION |
发明人 |
HART, CORNELIS MARIA;SLOB, ARIE |
分类号 |
H03F3/185;G11C11/34;G11C11/411;G11C11/413;G11C11/414;H01L21/331;H01L21/8226;H01L27/00;H01L27/02;H01L27/04;H01L27/06;H01L27/082;H01L27/102;H01L29/47;H01L29/72;H01L29/73;H01L29/872;H03F3/04;H03F3/34;H03F3/343;H03F3/347;H03K3/012;H03K3/288;H03K3/289;H03K19/08;H03K19/091;H04R25/00;(IPC1-7):G11C11/40;G11C13/00 |
主分类号 |
H03F3/185 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|