发明名称 CONTACT STUD STRUCTURE FOR CONNECTING SEMICONDUCTOR DEVICE
摘要 PURPOSE: To provide a substrate contact point stud, having low electric migration characteristics without void, by comprising a first metal layer which, reaction with substrate material for sticking, is so deposited as to fill-up the hole of an insulation layer, a second metal layer of fire-proof metal deposited over it, and a third metal layer of fire-proof metal deposited over it. CONSTITUTION: An insulation body is deposited all over a substrate 1. Then, with the insulation body flattened, each part is selectively removed at a pre-determined position for a substrate surface for contact point to be exposed. Then, a reactive sticking layer 15 is deposited all over the insulation body and a contact point hole 5, and a crystal seed layer 21 is deposited on the sticking layer 15. These both layers are stuck by spattering with the sticking layer 15 being transition metal capable of reducing SiO2 , in addition, the crystal seed layer 21 preferred to be fire-proof metal. Then, fire-proof metal such as tungsten is chemically grown in gaseous atmosphere for completing formation of a contact point stud as a filler layer 17.
申请公布号 JPH031570(A) 申请公布日期 1991.01.08
申请号 JP19890207105 申请日期 1989.08.11
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 HANGUUCHIYANGU WAADO FUANGU;POORU ANSONII TOTSUTA
分类号 H01L23/522;H01L21/28;H01L21/768;H01L23/532;H01L29/43 主分类号 H01L23/522
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