发明名称 |
VERFAHREN ZUR HERSTELLUNG EINES BAUTEILS ZUR VERWENDUNG BEI DER HALBLEITERBAUELEMENTFERTIGUNG |
摘要 |
Gallium arsenide antimonide phosphide (GaAsSbP) has been successfully grown on a gallium arsenide substrate by liquid phase epitaxy. A critical amount of phosphorus initially in growth solution is depleted with consequent grading of lattice constant and bandgap in the epitaxially grown layer. The substrate and graded layer as a subassembly are well suited for use in electronic devices such as double heterostructure lasers, light-emitting diodes, Schottky barrier diodes, and p-n junction photodiodes in the near-infrared low loss region of optical fibers. |
申请公布号 |
DE2715558(A1) |
申请公布日期 |
1977.10.27 |
申请号 |
DE19772715558 |
申请日期 |
1977.04.07 |
申请人 |
WESTERN ELECTRIC CO.,INC. |
发明人 |
CHRISTIAN DEWINTER,JOHN;EDWARD NAHORY,ROBERT;ALAN POLLACK,MARTIN |
分类号 |
C30B19/10;H01L21/208;H01L31/10;H01L31/108;H01L31/109;H01L33/00;H01L33/30;H01S5/00;H04B10/18;H04B10/28;(IPC1-7):H01L21/208;H01L31/18 |
主分类号 |
C30B19/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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