| 发明名称 |
SEMICONDUCTOR LASER UNIT |
| 摘要 |
<p>PURPOSE:To take out the oscillation light at the growth surface side by reflecting the oscillation light form the resonance surface at the reflection surface of reflecting growth layer, and to treat the oscillation light in the same way as the ordinary liminesent element even when it is mounted on the stem.</p> |
| 申请公布号 |
JPS52128088(A) |
申请公布日期 |
1977.10.27 |
| 申请号 |
JP19760045284 |
申请日期 |
1976.04.20 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
ASAHI KUNIHIKO;ITOU KUNIO;INOUE MORIO |
| 分类号 |
H01L33/10;H01L33/16;H01L33/30;H01S5/00;H01S5/042 |
主分类号 |
H01L33/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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