| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To obtain a resistor of small temperature dependency by forming a resistor of poly crystal Si on SiO2 film under the growing temperature of 600 - 700 deg.C and by introducing the impurity of over 5 X 10<14> atom/cm<3> into the resistor through diffusion or ion injection. |
| 申请公布号 |
JPS52128083(A) |
申请公布日期 |
1977.10.27 |
| 申请号 |
JP19760045077 |
申请日期 |
1976.04.20 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
YAMADA HARUO |
| 分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L27/06 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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