| 摘要 |
For amplifying the photosensitivity of a ferroelectric crystal in which information is to be stored, an external field applied to the crystal is created by means of a heavily doped, reduced photocell crystal illuminated uniformly by radiation within the absorption band of the crystal. The photocell crystal connected to the terminals of the lightly doped, non-reduced ferroelectric crystal, of which the resistivity is very much higher than that of the photocell crystal, develops a very high voltage which relaxes with a high time constant. Such a voltage increases the variations in the birefraction of the ferroelectric crystal.
|
