发明名称 GAS PHASE GROWTH REGULATION APPARATUS
摘要 PURPOSE:To regulate the thickness of the film with a high accuracy, by receiving the light from a sheet of semiconductive wafer, being situated other than both end and measuring the thickness of the film.
申请公布号 JPS52124483(A) 申请公布日期 1977.10.19
申请号 JP19760041272 申请日期 1976.04.14
申请人 HITACHI LTD 发明人 SUGAWARA KATSUO;YOSHIMI TAKEO
分类号 C30B25/16;C23C16/52;H01L21/205 主分类号 C30B25/16
代理机构 代理人
主权项
地址
您可能感兴趣的专利