| 发明名称 |
METHOD OF MAKING SEMICONDUCTOR DEVICE USING ION IMPLANTATION |
| 摘要 |
A region in an integrated circuit substrate is formed by first ion implanting impurities of a selected conductivity-determining type into a semiconductor substrate through at least one aperture in a masking electrically insulative layer, and then diffusing a conductivity-determining impurity of the same type through the same aperture into said substrate. |
| 申请公布号 |
JPS52122470(A) |
申请公布日期 |
1977.10.14 |
| 申请号 |
JP19770024960 |
申请日期 |
1977.03.09 |
| 申请人 |
IBM |
发明人 |
KONRATSUDO EI BARIRE;ROBAATO EMU BURIRU;JIYON ERU FUOONERISU;JIYOSEFU REU |
| 分类号 |
H01L21/306;H01L21/033;H01L21/22;H01L21/223;H01L21/265;H01L21/266;H01L21/331;H01L29/73 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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