Prepn. of film-forming solns. for doping semiconductors - from silylalkyl-carboranes and tetraalkoxy-silanes

摘要

Prepn. of film-forming solns. for doping semiconductor materials comprises mixing a hydrophilic organic solvent with H2O, adding a boron dopant, and then adding a tetra-alkoxysilane (I) in an amt. of 1 mole per 2-8 moles of H2O in the mixt. The boron dopant is a silylalkyl deriv. o of m-, o- or p-carborane of formula (II): CHB10H10-n(CH2CH2SiR3)nCH (where R=Cl or OEt; n = 1 or 2). The solns. can be used to diffuse B into Si in the mfr. of transistor and IC components. The solns. have good storage stability (shelf life >=6 months). Cpds. (II) have a high B content, low volatility, and good oxidative and thermal stability; they undergo hydrolysis and polycondensation with (I) to give precursors for borosilicate films with good mechanical and electrical properties.