发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To avoid electric field concentration at the boundary area and thus to increase the voltage resistance by providing single electric conduction type region of high relative resistance which is compensated by adverse electric conduction type impurity to the region including the boundary between Schottky barrier of single electric conduction type semiconductor substrate and insulation film. |
申请公布号 |
JPS52120774(A) |
申请公布日期 |
1977.10.11 |
申请号 |
JP19760038067 |
申请日期 |
1976.04.05 |
申请人 |
NIPPON ELECTRIC CO |
发明人 |
KAMIBAYASHI KAZUTOSHI;MUKOUGAWA MASASHI |
分类号 |
H01L27/06;H01L21/331;H01L21/44;H01L21/8222;H01L27/04;H01L29/47;H01L29/73;H01L29/872 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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