| 发明名称 |
DISPOSICAO DE MATERIAL PARA CONTATOS ELETRICOS DE CORRENTE FRACA |
| 摘要 |
A low-current contact structure formed on a contact member or substrate of various layers is described. A layer of refractory material is connected via a layer of easily diffusive metal with a layer of noble metal through diffusion annealing. |
| 申请公布号 |
BR7700675(A) |
申请公布日期 |
1977.10.11 |
| 申请号 |
BR19777700675 |
申请日期 |
1977.02.03 |
| 申请人 |
SIEMENS AG |
发明人 |
BORCHERT L;STENZEL K |
| 分类号 |
H01H11/04;H01B1/02;H01H1/021;H01H1/04;H01H50/54;(IPC1-7):H01H1/00 |
主分类号 |
H01H11/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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