Method of growing geometricallydefined epitaxial layer without formation of undesirable crystallites,申请号US19630312703-传众专利搜索

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发明名称	Method of growing geometricallydefined epitaxial layer without formation of undesirable crystallites
摘要
申请公布号	US3206339(A)	申请公布日期	1965.09.14
申请号	US19630312703	申请日期	1963.09.30
申请人	PHILCO CORPORATION	发明人	THORNTON CLARENCE G.
分类号	H01L21/00;H01L21/20;H01L21/316	主分类号	H01L21/00
代理机构		代理人
主权项
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