| 摘要 |
1,243,801. Magnetoresistance elements. SONY CORP. 20 Sept., 1968 [23 Sept., 1967; 29 Dec., 1967], No. 44832/68. Heading H1K. A matched pair of magnetoresistance elements is made by providing a pellet of intrinsic semi-conductor material in which spaced p-type and n-type regions have been simultaneously formed, and dividing the pellet into said matched pair of elements by cutting the pellet so that each one of said pair includes a p-type and an n-type region and so that the cut sidewall of each one of said pair forms a recombination region. In an embodiment, an intrinsic Ge wafer 2 has depressions made in it to receive p-type impurity material 3a, 3a<SP>1</SP>, e.g. In-Ga, and ntype impurity material 3b, 3b<SP>1</SP>, e.g. In-As. The wafer is heated to alloy or diffuse the impurity material and leads 5 are attached. The wafer is treated in H 2 O 2 to stabilize the surfaces. The wafer is joined to a ferrite or ceramic base plate 7 by epoxy resin 6 which also covers the wafer. The wafer is cut in two by a diamond cutter, sandblasting or etching and the groove (4) so formed filled with resin (Figs. 5 and 7, not shown). In an alternative embodiment (Figs. 9 and 10, not shown) a plurality of impurity dots are formed on a semi-conductor slice and the slice cut to give individual wafers which are treated as above. In another embodiment (Figs. 11 to 19, not shown) a germanium slice is etched through a photoresist mask to give a plurality of holes to receive the alloy impurities and a framework of grooves for subsequent separation of the slice into wafers. Alloy dots are formed, the wafers separated and then treated as above. In an alternative embodiment (Fig. 20, not shown) two grooves are formed near either end of the wafer instead of forming pairs of dots, the grooves filled respectively with ptype and n-type impurity material and the cut is made across the filled grooves. Matched pairs of magnetoresistance elements having three electrodes (Figs. 21 and 22, not shown) may be similarly made by forming two holes near one end of the wafer on the top surface thereof, two holes at the same end on the under surface and two near the other end and subsequently filling with appropriate alloy. |
